? semiconductor components industries, llc, 2009 february, 2009 ? rev. 5 1 publication order number: bss138lt1/d bss138lt1 preferred device power mosfet 200 ma, 50 v n ? channel sot ? 23 typical applications are dc ? dc converters, power management in portable and battery ? powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low threshold voltage (v gs(th) : 0.5 v ? 1.5 v) makes it ideal for low voltage applications ? miniature sot ? 23 surface mount package saves board space ? pb ? free packages are available maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss 50 vdc gate ? to ? source voltage ? continuous v gs 20 vdc drain current ? continuous @ t a = 25 c ? pulsed drain current (t p 10 s) i d i dm 200 800 ma total power dissipation @ t a = 25 c p d 225 mw operating and storage temperature range t j , t stg ? 55 to 150 c thermal resistance, junction ? to ? ambient r ja 556 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 3 1 2 device package shipping ? ordering information bss138lt1 sot ? 23 3000 tape & reel n ? channel sot ? 23 case 318 style 21 j1 m marking diagram 2 1 3 bss138lt3 sot ? 23 10,000 tape & reel 200 ma, 50 v r ds(on) = 3.5 preferred devices are recommended choices for future use and best overall value. bss138lt1g sot ? 23 (pb ? free) 3000 tape & reel bss138lt3g sot ? 23 (pb ? free) 10,000 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. http://onsemi.com 1 j1 = device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location.
bss138lt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (v gs = 0 vdc, i d = 250 adc) v (br)dss 50 ? ? vdc zero gate voltage drain current (v ds = 25 vdc, v gs = 0 vdc) (v ds = 50 vdc, v gs = 0 vdc) i dss ? ? ? ? 0.1 0.5 adc gate ? source leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 0.1 adc on characteristics (note 1) gate ? source threshold voltage (v ds = v gs , i d = 1.0 madc) v gs(th) 0.5 ? 1.5 vdc static drain ? to ? source on ? resistance (v gs = 2.75 vdc, i d < 200 madc, t a = ? 40 c to +85 c) (v gs = 5.0 vdc, i d = 200 madc) r ds(on) ? ? 5.6 ? 10 3.5 forward transconductance (v ds = 25 vdc, i d = 200 madc, f = 1.0 khz) g fs 100 ? ? mmhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0, f = 1 mhz) c iss ? 40 50 pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1 mhz) c oss ? 12 25 transfer capacitance (v dg = 25 vdc, v gs = 0, f = 1 mhz) c rss ? 3.5 5.0 switching characteristics (note 2) turn ? on delay time (v dd = 30 vdc, i d = 0.2 adc,) t d(on) ? ? 20 ns turn ? off delay time t d(off) ? ? 20 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature.
bss138lt1 http://onsemi.com 3 typical electrical characteristics r ds(on) , drain-to-source resistance (normalized) figure 1. on ? region characteristics 1 t j , junction temperature ( c) figure 2. transfer characteristics figure 3. on ? resistance variation with temperature v gs = 10 v i d = 0.8 a -55 -5 45 95 145 0.6 0.8 v gs , gate-to-source voltage (volts) 0 4 0 q t , total gate charge (pc) 8 500 v ds = 40 v t j = 25 c 1000 i d = 200 ma 1500 1.2 2 1.4 1.6 1.8 v gs = 4.5 v i d = 0.5 a 2000 10 2 6 v gs(th) , variance (volts) 1 t j , junction temperature ( c) i d = 1.0 ma -55 -5 45 95 145 0.75 0.875 1.125 1.25 0 0.3 0.4 0.1 0.6 0.2 figure 4. threshold voltage variation with temperature 1 1.5 2 2.5 3 i d , drain current (amps) v gs , gate-to-source voltage (volts) figure 5. gate charge v ds = 10 v 150 c 25 c -55 c 3.5 0.5 4 024 10 0 0.3 0.4 v ds , drain-to-source voltage (volts) i d , drain current (amps) 6 0.1 8 0.6 0.2 0.5 13 9 57 v gs = 3.25 v v gs = 2.75 v v gs = 2.5 v v gs = 3.0 v v gs = 3.5 v 0.7 0.8 t j = 25 c 0.7 0.8 0.9 4.5 0.5 0 2.2 -30 20 70 120 2500 3000 v ds , drain-to-source voltage (v) 125 c figure 6. idss 1.0e-9 1.0e-8 10 15 20 25 30 35 1.0e-7 40 1.0e-6 1.0e-5 50 5 045 150 c i dss , drain-to-source leakage (a)
bss138lt1 http://onsemi.com 4 typical electrical characteristics r ds(on) , drain-to-source resistance (ohms) figure 7. on ? resistance versus drain current 0 0.1 0.2 2 5 6 figure 8. on ? resistance versus drain current i d , drain current (amps) figure 9. on ? resistance versus drain current 0.001 0.1 1 figure 10. on ? resistance versus drain current v sd , diode forward voltage (volts) figure 11. body diode forward voltage i d , diode current (amps) 25 c v gs = 2.5 v t j = 150 c 4 0 0.2 0.4 0.6 3 0.01 -55 c 25 c 0.8 r ds(on) , drain-to-source resistance (ohms) 0 0.1 0.2 1 7 i d , drain current (amps) v gs = 2.75 v 5 3 0 120 40 0 80 510 c iss 15 0.05 0.15 0.25 150 c -55 c 6 8 4 2 0.05 0.15 0.25 20 1.0 1.2 150 c 25 c -55 c 8 9 7 100 20 60 figure 12. capacitance r ds(on) , drain-to-source resistance (ohms) 0 0.2 0.4 0.05 1 2.5 3 i d , drain current (amps) 25 c v gs = 4.5 v 2 1.5 r ds(on) , drain-to-source resistance (ohms) 0 0.2 0.4 0.05 1 4 i d , drain current (amps) v gs = 10 v 3 2 0.1 0.3 0.5 150 c -55 c 3.5 4.5 2.5 1.5 0.1 0.3 0.5 150 c 25 c -55 c 4 4.5 3.5 10 1 0.25 0.45 0.15 0.35 5 5.5 6 0.25 0.45 0.15 0.35 25 c oss c rss
bss138lt1 http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c style 21: pin 1. gate 2. source 3. drain soldering footprint* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. bss138lt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
